Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect

Author

Wang, Yiwei ; Chae, Seung-Hyun ; Dunne, Rajiv ; Takahashi, Yoshimi ; Mawatari, Kazuaki ; Steinmann, Philipp ; Bonifield, Tom ; Jiang, Tengfei ; Im, Jay ; Ho, Paul S.

Author_Institution

Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA

fYear

2012

fDate

May 29 2012-June 1 2012

Firstpage

319

Lastpage

325

Abstract

In this study, electromigration (EM) reliability of TSV-microbump (μ-bump) joints was investigated. Sn-based μ-bumps with three different schemes of metallization were tested under current stressing at elevated temperatures. EM-stressed μ-bumps, together with thermal anneal-only μ-bumps and as-received controls, were cross-sectioned and characterized using scanning electron microscope (SEM), energy dispersed x-ray (EDX) and focused ion beam (FIB). Intermetallic compound (IMC) growth kinetics under EM for the three types of metallization were obtained, and compared with those subjected to thermal annealing only. Results showed good EM performance of the TSV μ-bump joints, indicating that IMC formation plays an important role in improving the EM reliability of μ-bump joints. However, non-EM related voids were observed in the μ-bumps, and the voiding mechanisms were discussed.

Keywords

X-ray chemical analysis; annealing; electromigration; focused ion beam technology; integrated circuit interconnections; integrated circuit reliability; metallisation; scanning electron microscopes; tin; 3D interconnect; EDX; FIB; SEM; Sn; TSV microbump joints; current stressing; electromigration reliability; energy dispersed x-ray; focused ion beam; intermetallic compound growth kinetics; intermetallic formation; metallization; scanning electron microscope; thermal annealing; through-silicon-vias; voiding mechanisms; Annealing; Intermetallic; Joints; Nickel; Reliability; Through-silicon vias; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

978-1-4673-1966-9

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2012.6248849

Filename

6248849