Title :
Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect
Author :
Wang, Yiwei ; Chae, Seung-Hyun ; Dunne, Rajiv ; Takahashi, Yoshimi ; Mawatari, Kazuaki ; Steinmann, Philipp ; Bonifield, Tom ; Jiang, Tengfei ; Im, Jay ; Ho, Paul S.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fDate :
May 29 2012-June 1 2012
Abstract :
In this study, electromigration (EM) reliability of TSV-microbump (μ-bump) joints was investigated. Sn-based μ-bumps with three different schemes of metallization were tested under current stressing at elevated temperatures. EM-stressed μ-bumps, together with thermal anneal-only μ-bumps and as-received controls, were cross-sectioned and characterized using scanning electron microscope (SEM), energy dispersed x-ray (EDX) and focused ion beam (FIB). Intermetallic compound (IMC) growth kinetics under EM for the three types of metallization were obtained, and compared with those subjected to thermal annealing only. Results showed good EM performance of the TSV μ-bump joints, indicating that IMC formation plays an important role in improving the EM reliability of μ-bump joints. However, non-EM related voids were observed in the μ-bumps, and the voiding mechanisms were discussed.
Keywords :
X-ray chemical analysis; annealing; electromigration; focused ion beam technology; integrated circuit interconnections; integrated circuit reliability; metallisation; scanning electron microscopes; tin; 3D interconnect; EDX; FIB; SEM; Sn; TSV microbump joints; current stressing; electromigration reliability; energy dispersed x-ray; focused ion beam; intermetallic compound growth kinetics; intermetallic formation; metallization; scanning electron microscope; thermal annealing; through-silicon-vias; voiding mechanisms; Annealing; Intermetallic; Joints; Nickel; Reliability; Through-silicon vias; Tin;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6248849
