Title :
P-channel SONOS Transient Current Modeling for Program and Erase
Author :
Du, Pei-Ying ; Guo, Jyh-Chyurn ; Lee, H.M. ; Chen, H.M. ; Shen, Rick ; Hsu, C.C.-H.
Author_Institution :
Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Rd, Hsinchu, Taiwan, R.O.C.
Abstract :
Transient current models with time and field dependence are proposed. The time dependence follows asymptotic t-1 behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.
Keywords :
CMOS technology; Dielectrics; Electron traps; Electronics industry; Energy states; Industrial electronics; Oxidation; SONOS devices; Threshold voltage; Tunneling;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251116
