DocumentCode
2722069
Title
Novel T shape structure PCM and Electrical-Thermal Characteristics
Author
Wang, W.H. ; Chao, D.S. ; Chen, Y.C. ; Lee, C.M. ; Hsu, H.H. ; Chuo, Y. ; Tseng, M.H. ; Lee, M.H. ; Chen, W.S. ; Kao, M.J. ; Tsai, M.J.
Author_Institution
Electron. Res. & Service Organ., ITRI, Hsinchu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
Novel interfacial layer structure was proposed with adjustable resistance ratio and more uniform data distribution capabilities. The reduction of writing power can also be expected with further optimizing the materials and corresponding thicknesses. The performance will be even better with the shrinking of contact area
Keywords
interface structure; phase change materials; semiconductor storage; T shape structure; electrical-thermal characteristics; interfacial layer structure; phase change memory; Amorphous materials; CMOS technology; Conductivity; Electric resistance; Nonvolatile memory; Paper technology; Phase change materials; Plugs; Shape; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251057
Filename
4016593
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