DocumentCode
2722097
Title
Writing Architecture for Magnetic Random Access Memory with Negative Pulse Writing Scheme
Author
Chang, C.P. ; Hung, C.C. ; Wang, Y.H. ; Lee, Y.J. ; Su, K.L. ; Chen, W.C. ; Chen, Y.H. ; Lin, C.S. ; Kao, M.J. ; Huang, J.F. ; Tsai, M.J.
Author_Institution
Electron. Res. & Service Organ. (ERSO), ITRI, Hsinchu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
The toggle cell of MRAM needs large current for writing. In this work, the negative pulse scheme for toggle writing is proposed, and the implemented architecture is also described. The scheme can reduce the writing current and improve the toggle yield. A single current source scheme is also designed to provide the symmetrical and bi-directional current
Keywords
magnetic storage; memory architecture; random-access storage; MRAM; bidirectional current; magnetic random access memory; negative pulse writing scheme; single current source scheme; symmetrical current; toggle cells; toggle writing; writing architecture; Bidirectional control; Circuits; Energy consumption; Lithography; Low voltage; Pulse generation; Random access memory; Routing; Switches; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251059
Filename
4016595
Link To Document