Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters

Author

KruÌˆgener, Jan ; Peibst, Robby ; Wolf, F. Alexander ; Bugiel, Eberhard ; Ohrdes, Tobias ; Kiefer, Fabian ; Schollhorn, Claus ; Grohe, Andreas ; Brendel, Rolf ; Osten, H. Jorg

Author_Institution

Inst. of Electron. Mater. & Devices, Leibniz Univ. Hannover, Hannover, Germany

Volume

5

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

166

Lastpage

173

Abstract

Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J_0e is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J_0e values around 40 fA/cm², defects are present within the valleys of the textured surfaces after annealing. On textured Al₂O₃ -passivated boron emitters, we measure J_0e of 38 fA/cm ² for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).

Keywords

aluminium compounds; boron; crystal defects; ion implantation; passivation; rapid thermal annealing; semiconductor materials; surface texture; Al₂O₃-B; Al₂O₃-passivated boron emitters; defect density; dislocation loops; electrical analysis; high boron ion-implanted emitters; high-temperature rapid thermal annealing; implant-induced crystal defects; n-type cells; p-type emitters; sheet resistance; structural analysis; surface texture; time 6 s to 20 min; Annealing; Boron; Density measurement; Doping; Ion implantation; Surface texture; Temperature measurement; Boron; crystal defects; ion implantation; photovoltaic; rapid thermal annealing (RTA); silicon;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2014.2365468

Filename

6970768