DocumentCode
2722297
Title
A CMOS-compatible chip-to-chip 3D integration platform
Author
Temiz, Yuksel ; Zervas, Michael ; Guiducci, Carlotta ; Leblebici, Yusuf
Author_Institution
Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
fYear
2012
fDate
May 29 2012-June 1 2012
Firstpage
555
Lastpage
560
Abstract
In this paper, a CMOS-compatible chip-to-chip 3D integration platform will be presented. The developed technology allows reconstituting a wafer from diced and thinned chips. Then, chip-to-chip bonding and TSV fabrication steps are accomplished in wafer-level. A parylene deposition technique developed throughout this research provides a very flat wafer surface after chip embedding, thus, photoresist spin-coating and patterning can easily be performed in wafer-level. For a full-wafer exposure by a mask aligner, 5μm mask-to-chip alignment accuracy is achieved in average. In the preliminary tests, two dummy chips are successfully bonded, and TSVs with parylene sidewall passivation and electroplated Cu metallization are fabricated. The daisy-chain resistance measurements demonstrate average TSV resistance of 0.5Ω. The proposed technique introduces a simple and low-cost solution not only for 3D integration technology but also for applications involving CMOS post-processing in general, especially when the full-wafer CMOS is not affordable or not possible to post-process due to compatibility issues.
Keywords
CMOS integrated circuits; chip scale packaging; masks; passivation; photoresists; semiconductor device metallisation; spin coating; three-dimensional integrated circuits; wafer level packaging; CMOS compatible integration platform; CMOS post-processing; Cu; TSV fabrication; chip embedding; chip-to-chip 3D integration platform; chip-to-chip bonding; daisy-chain resistance measurements; diced chip; dummy chips; electroplated Cu metallization; full-wafer CMOS; mask aligner; parylene deposition; parylene sidewall passivation; photoresist spin-coating; thinned chip; wafer-level; Bonding; CMOS integrated circuits; Etching; Passivation; Resists; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4673-1966-9
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2012.6248884
Filename
6248884
Link To Document