• DocumentCode
    2722297
  • Title

    A CMOS-compatible chip-to-chip 3D integration platform

  • Author

    Temiz, Yuksel ; Zervas, Michael ; Guiducci, Carlotta ; Leblebici, Yusuf

  • Author_Institution
    Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    555
  • Lastpage
    560
  • Abstract
    In this paper, a CMOS-compatible chip-to-chip 3D integration platform will be presented. The developed technology allows reconstituting a wafer from diced and thinned chips. Then, chip-to-chip bonding and TSV fabrication steps are accomplished in wafer-level. A parylene deposition technique developed throughout this research provides a very flat wafer surface after chip embedding, thus, photoresist spin-coating and patterning can easily be performed in wafer-level. For a full-wafer exposure by a mask aligner, 5μm mask-to-chip alignment accuracy is achieved in average. In the preliminary tests, two dummy chips are successfully bonded, and TSVs with parylene sidewall passivation and electroplated Cu metallization are fabricated. The daisy-chain resistance measurements demonstrate average TSV resistance of 0.5Ω. The proposed technique introduces a simple and low-cost solution not only for 3D integration technology but also for applications involving CMOS post-processing in general, especially when the full-wafer CMOS is not affordable or not possible to post-process due to compatibility issues.
  • Keywords
    CMOS integrated circuits; chip scale packaging; masks; passivation; photoresists; semiconductor device metallisation; spin coating; three-dimensional integrated circuits; wafer level packaging; CMOS compatible integration platform; CMOS post-processing; Cu; TSV fabrication; chip embedding; chip-to-chip 3D integration platform; chip-to-chip bonding; daisy-chain resistance measurements; diced chip; dummy chips; electroplated Cu metallization; full-wafer CMOS; mask aligner; parylene deposition; parylene sidewall passivation; photoresist spin-coating; thinned chip; wafer-level; Bonding; CMOS integrated circuits; Etching; Passivation; Resists; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248884
  • Filename
    6248884