New approach on monolithically integration of semiconductor optical amplifiers and electroabsorption modulators by chain structure

Author

Lin, Fang-Zheng ; Wu, Tsu-Hsiu ; Chiu, Yi-Jen

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung

fYear

2008

fDate

7-10 July 2008

Firstpage

1

Lastpage

2

Abstract

A novel monolithically integration of electroabsorption modulators (EAM) and semiconductor optical amplifiers (SOA) by chain structure is demonstrated. Chained SOA-Integrated EAMs with high-impedance-transmission-lines not only offers the performance of high extinction ration (> 20 dB) with gain, but also good microwave properties. Low reflection of <-12 dB (up to 30 GHz) and -3 dB electrical-to-optical bandwidth of > 30 GHz are obtained.

Keywords

electro-optical modulation; electroabsorption; integrated optics; semiconductor optical amplifiers; chain structure; electroabsorption modulators; high-impedance-transmission-lines; microwave properties; monolithic integration; semiconductor optical amplifiers; Bandwidth; High speed optical techniques; Impedance; Microwave devices; Optical modulation; Optical pumping; Optical reflection; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the

Conference_Location

Sydney

Print_ISBN

978-0-85825-807-5

Electronic_ISBN

978-0-85825-807-5

Type

conf

DOI

10.1109/OECCACOFT.2008.4610377

Filename

4610377