• DocumentCode
    2722590
  • Title

    Characterization and modelling of Si-substrate noise induced by RF signal propagating in TSV of 3D-IC stack

  • Author

    Brocard, M. ; Le Maître, P. ; Bermond, C. ; Bar, P. ; Anciant, R. ; Farcy, A. ; Lacrevaz, T. ; Leduc, P. ; Coudrain, P. ; Hotellier, N. ; Ben Jamaa, H. ; Chéramy, S. ; Sillon, N. ; Marin, J-C ; Fléchet, B.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    665
  • Lastpage
    672
  • Abstract
    TSVs in 3D integrated circuits are a source of noise that can affect nearby transistor performance. So an analytical physics-based model of the TSV-to-substrate coupling is proposed to perform time domain or noise simulations. Silicon measurements at low frequencies and radiofrequencies are reported. Simulations are done using a software performing device and electromagnetic co-simulations. The model and simulations are validated by measurements. Simulations to study the sensitivity of the TSV structure to the layout show changes in the TSV-to-substrate coupling behavior.
  • Keywords
    circuit simulation; elemental semiconductors; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; silicon; three-dimensional integrated circuits; time-domain analysis; 3D integrated circuits; 3D-IC stack; RF signal propagation; Si; TSV structure sensitivity; TSV-to-substrate coupling behavior; analytical physics-based model; electromagnetic co-simulations; noise simulations; radiofrequency signal propagation; silicon measurements; software performing device; substrate noise modelling; time domain simulation; transistor performance; Capacitance; Frequency measurement; Integrated circuit modeling; Semiconductor device modeling; Silicon; Substrates; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248903
  • Filename
    6248903