Title :
Characterization and modelling of Si-substrate noise induced by RF signal propagating in TSV of 3D-IC stack
Author :
Brocard, M. ; Le Maître, P. ; Bermond, C. ; Bar, P. ; Anciant, R. ; Farcy, A. ; Lacrevaz, T. ; Leduc, P. ; Coudrain, P. ; Hotellier, N. ; Ben Jamaa, H. ; Chéramy, S. ; Sillon, N. ; Marin, J-C ; Fléchet, B.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
May 29 2012-June 1 2012
Abstract :
TSVs in 3D integrated circuits are a source of noise that can affect nearby transistor performance. So an analytical physics-based model of the TSV-to-substrate coupling is proposed to perform time domain or noise simulations. Silicon measurements at low frequencies and radiofrequencies are reported. Simulations are done using a software performing device and electromagnetic co-simulations. The model and simulations are validated by measurements. Simulations to study the sensitivity of the TSV structure to the layout show changes in the TSV-to-substrate coupling behavior.
Keywords :
circuit simulation; elemental semiconductors; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; silicon; three-dimensional integrated circuits; time-domain analysis; 3D integrated circuits; 3D-IC stack; RF signal propagation; Si; TSV structure sensitivity; TSV-to-substrate coupling behavior; analytical physics-based model; electromagnetic co-simulations; noise simulations; radiofrequency signal propagation; silicon measurements; software performing device; substrate noise modelling; time domain simulation; transistor performance; Capacitance; Frequency measurement; Integrated circuit modeling; Semiconductor device modeling; Silicon; Substrates; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6248903
