DocumentCode
2722636
Title
Electron Trapping Processes in High-K Gate Dielectrics and Nature of Traps
Author
Bersuker, G. ; Gavartin, J. ; Sim, J. ; Park, C.S. ; Young, C. ; Nadkarni, S. ; Choi, R. ; Shluger, A. ; Lee, B.H.
Author_Institution
Condensed Matter & Mater. Phys., Univ. Coll. London
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
The results in this paper suggest that migration of the electrons, captured during the fast charging process, to other available traps represents the major process responsible for the intrinsic Vt instability in the high-k NMOS transistors. The extracted trap characteristics are consistent with those of the oxygen vacancies in the monoclinic hafnia
Keywords
MOSFET; dielectric materials; electromigration; electron traps; electron migration; electron trapping process; fast charging process; high-k NMOS transistors; high-k gate dielectrics; intrinsic voltage instability; monoclinic hafnia; oxygen vacancies; trap characteristics; Annealing; Electron emission; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Pulse measurements; Stress; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251087
Filename
4016623
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