HfSiON Gate Dielectric for 45nm Node Low-Power Device

Author

Gan, Tian-Choy ; Wang, Howard C H ; Chen, Shang-Jr ; Tsai, Ching-Wei ; Lim, Peng-Soon ; Lin, Huan-Just ; Jin, Ying ; Tao, Hun-Jan ; Chen, Shih-Chang ; Leung, Ying Keung ; Diaz, Carlos H. ; Liang, Mong-Song ; Yuh-Jier Mii

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu

fYear

2006

fDate

24-26 April 2006

Firstpage

1

Lastpage

2

Abstract

A 1.4 nm EOT stack film of HfSiON with interfacial oxide layer (IL) is demonstrated with excellent electrical characteristics and reliability for 45 nm node low-power technology. Mobility comparable to SiON is achieved along with adequate nMOS PBTI lifetime, TDDB lifetime, and breakdown voltage (V_BD). For the first time, we report lower V_BD for the HfSiON stack film despite of 3 orders gate leakage reduction compared to the same EOT SiON. It is attributed to IL breakdown in the proposed two-step breakdown mechanism. This possibly limits the scalability of such a stack film. On the other side, over-drivability of HfSiON with thick underlying oxide boosts input/output (I/O) device performance significantly

Keywords

MOSFET; dielectric materials; hafnium compounds; high-k dielectric thin films; low-power electronics; oxygen compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; 45 nm; EOT stack film; HfSiON; PBTI lifetime; TDDB lifetime; breakdown voltage; gate dielectric; gate leakage reduction; interfacial oxide layer; low-power device; nMOS; Breakdown voltage; Capacitance-voltage characteristics; Dielectric devices; Electric breakdown; Gate leakage; Leakage current; MOS devices; Nitrogen; Scalability; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2006 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0181-4

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2006.251088

Filename

4016624