• DocumentCode
    2722709
  • Title

    HfxTayNz Metal Gate Electrodes for Advanced MOS Devices Applications

  • Author

    Cheng, Chin-Lung ; Chang-Liao, Kuei-Shu ; Wang, Tzu-Chen ; Wang, Tien-Ko ; Wang, Howard Chih-Hao

  • Author_Institution
    Inst. of Mech. & Electro-Mech. Eng., Nat. Formosa Univ., Huwei
  • fYear
    2006
  • fDate
    24-26 April 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    With a small amount of hafnium (Hf) incorporated into tantalum nitride (TaN) metal gate, excellent thermal stability of electrical properties can be achieved up to post-metal anneal at 950 degC for 45 s. Besides, a work function tuning range from 4.2 to 4.6 eV can be obtained by suitably adjusting nitrogen (N) concentration in Hfx TayNz metal gate
  • Keywords
    MIS devices; electric properties; electrochemical electrodes; hafnium compounds; tantalum compounds; thermal stability; work function; 4.2 to 4.6 eV; 45 s; 950 C; HfxTayNz; advanced MOS devices; electrical properties; excellent thermal stability; metal gate electrodes; nitrogen concentration; post-metal anneal; work function tuning range; Electrodes; Hafnium; High-K gate dielectrics; MOS devices; Nitrogen; Plasma temperature; Rapid thermal annealing; Temperature measurement; Thermal stability; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2006 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0181-4
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2006.251091
  • Filename
    4016627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2722709