Author :
Widiez, J. ; Vinet, M. ; Guillaumot, B. ; Garros, X. ; Minoret, S. ; Poiroux, T. ; Weber, O. ; Thevenod, L. ; Holliger, P. ; Previtali, B. ; Barral, V. ; Cherif, K. Sidi Ali ; Grosgcorges, K.P. ; Toffoli, A. ; Maîtrejean, S. ; Cassé, M. ; Martin, F. ; Laf
Abstract :
For the first time, we report fully depleted SOI MOS transistors with WSix gate on HfO2. Gate work function, dielectric properties and channel mobility are presented in terms of Si/W ratio and compared to TiN gate devices. A 35% electron mobility gain was obtained with a WSix gate device as compared to a TiN gate transistor. It was found that both mobility and dielectric characteristics were drastically improved by decreasing the Si/W ratio of WSix films
Keywords :
MOSFET; dielectric properties; electron mobility; hafnium compounds; silicon-on-insulator; stoichiometry; titanium compounds; tungsten compounds; work function; HfO2; Si/W ratio; TiN; WSix; channel mobility; dielectric properties; electrical properties; fully depleted SOI MOSFET; gate work function; metal gate stoichiometry; Atomic layer deposition; Dielectric materials; Electron mobility; Hafnium oxide; Leakage current; MOSFETs; Scattering; Temperature; Threshold voltage; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
