Author :
Severi, S. ; Augendre, I.E. ; Falepin, A. ; Kerner, C. ; Ramos, J. ; Eyben, P. ; Vandervost, W. ; Curatola, C. ; Felch, S. ; Nouri, F. ; Kraus, P. ; Parihar, V. ; Noda, T. ; Schreutelkamp, R. ; Hoffmann, T.Y. ; Absil, P. ; De Meyer, K. ; Jurczak, M. ; Bie
Abstract :
We demonstrate for the first time the integration of metal gate electrode and non-melt laser annealed junctions in both NMOS and PMOS transistors. We report the highest drive current so far in laser annealed devices with good short channel effects (SCE) control down to 40nm gate length. Overlap length is quantified by CV and SSRM, values of 2 nm for both NMOS and PMOS laser-annealed transistors are reported for the first time
Keywords :
MOSFET; electrodes; laser beam annealing; NMOS metal gate transistors; PMOS metal gate transistors; drive current; junction activation; laser annealed devices; laser annealing; metal gate electrode; nonmelt laser annealed junctions; short channel effects; Annealing; Degradation; Electrodes; Implants; MOS devices; MOSFETs; Parasitic capacitance; Temperature; Transistors; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
