DocumentCode
2722847
Title
Die-Based Electromigration Characterization For Copper/Low-K Dual Damascene Interconnects
Author
Lee, Shou-Chung ; Oates, Anthony S.
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
We demonstrate that electromigration (EM) failure distributions can be determined from multi-link via chain test structures by the analysis of successive failures of in the chain. Failure distributions from one multi-link structure are consistent with that of conventional single link structure. This approach to testing results in improved defect sensitivity and allows the variation of EM failure characteristics across wafers to be determined
Keywords
copper alloys; electromigration; failure analysis; integrated circuit interconnections; low-k dielectric thin films; Cu; chain test structures; copper/low-k dielectrics; die-based electromigration characterization; dual damascene interconnects; failure distributions; multilink structure; Atomic layer deposition; Copper; Electromigration; Electrons; Failure analysis; Manufacturing industries; Metals industry; Optical character recognition software; Semiconductor device manufacture; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251098
Filename
4016634
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