• DocumentCode
    2722935
  • Title

    A New Series Resistance and Mobility Extraction Method by BSIM Model for Nano-Scale MOSFETs

  • Author

    Chen, William P N ; Su, P. ; Wang, J.-S. ; Lien, C.H. ; Chang, C.H. ; Goto, K. ; Diaz, C.H.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsin-Chu
  • fYear
    2006
  • fDate
    24-26 April 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, a simplified BSIM-based model has been proposed to solve the above issues contributed by halo implants [Goto, K, et al., 2003]. In this new methodology, Rsd and mueff can be uniquely extracted in nano-scale devices. Furthermore, the extracted LG dependency of mueff may serve as a good indicator for monitoring the relationship between geometry and stress parameters
  • Keywords
    MOSFET; carrier mobility; semiconductor device models; BSIM model; halo implants; mobility dependency; mobility extraction method; nano-scale MOSFET; series resistance; stress parameter; Condition monitoring; Degradation; Electric resistance; Geometry; Implants; MOS devices; MOSFETs; Nanoscale devices; Semiconductor device manufacture; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2006 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0181-4
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2006.251104
  • Filename
    4016640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2722935