Title :
A novel scallop free TSV etching method in magnetic neutral loop discharge plasma
Author :
Morikawa, Yasuhiro ; Murayama, Takahide ; Sakuishi, Toshiyuki ; Yoshii, Manabu ; Suu, Koukou
Author_Institution :
Inst. of Semicond. & Electron. Technol, ULVAC Inc., Shizuoka, Japan
fDate :
May 29 2012-June 1 2012
Abstract :
In recent years, "2.5D silicon interposers" and "Full 3D stacked" technology for high-performance LSI has attracted much attention since this technology can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked LSI. 2.5D and 3D Si integration has great advantages over conventional two-dimensional devices such as high packaging density, small wire length, high-speed operation, low power consumption, and high feasibility for parallel processing.
Keywords :
etching; integrated circuit interconnections; integrated circuit packaging; large scale integration; low-power electronics; parallel processing; plasma materials processing; three-dimensional integrated circuits; 2.5D silicon interposers; full 3D stacked technology; high performance LSI; interconnection problems; low power consumption; magnetic neutral loop discharge plasma; packaging density; parallel processing; scallop free TSV etching; through silicon via; wire length; Etching; Fabrication; Iterative closest point algorithm; Plasma density; Silicon; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6248923
