DocumentCode :
2722994
Title :
Thermal effects on through-silicon via (TSV) signal integrity
Author :
Lee, Manho ; Cho, Jonghyun ; Kim, Joohee ; Pak, Jun So ; Lee, Hyungdong ; Lee, Junho ; Park, Kunwoo ; Kim, Joungho
Author_Institution :
Dept. of Electr. Eng. Korea Adv., Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear :
2012
fDate :
May 29 2012-June 1 2012
Firstpage :
816
Lastpage :
821
Abstract :
The thermal effect on through-silicon via (TSV) noise coupling and S21 of TSV channel were measured in both frequency and time domain from corresponding TSV based passive chips. These measurement results are analyzed using the temperature-dependent TSV lumped model to TSV channel and shows good correlation with measurement. Under the hundreds-of-MHz frequency range, increasing temperature decreases the S21 of TSV channel, but over that frequency range, increasing temperature increases the S21. These phenomena are explained from the model which thermal dependence of the materials is applied.
Keywords :
frequency-domain analysis; integrated circuit measurement; integrated circuit modelling; thermal analysis; three-dimensional integrated circuits; time-domain analysis; TSV channel; TSV signal integrity; frequency domain analysis; noise coupling; temperature-dependent TSV lumped model; thermal dependence; thermal effects; through-silicon via; time domain analysis; Couplings; Frequency domain analysis; Noise; Temperature measurement; Through-silicon vias; Vehicles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2012.6248927
Filename :
6248927
Link To Document :
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