Effects of silicon substrate coupling phenomena on signal integrity for RF or high speed communications in 3D-IC

Author

Eid, E. ; Lacrevaz, T. ; Houzet, G. ; Bermond, C. ; Fléchet, B. ; Farcy, A. ; Calmon, F. ; Leduc, P.

Author_Institution

IMEP-LAHC, Univ. de Savoie, Le Bourget du Lac, France

fYear

2012

fDate

May 29 2012-June 1 2012

Firstpage

827

Lastpage

833

Abstract

This paper proposes studies to learn more about substrate coupling phenomena in 3D-IC by evaluating their impact on signals integrity. Studies consist in analysing analogue signals and realistic digital communications while respectively RF or high speed signals are carried by interconnections such as TSV and RDL in noisy environment. Integrity of transmitted signals is analyzed in terms of signal amplitude, signal shape, SNR (signal to noise ratio), data rate and eye diagrams when a chosen parasitic signal plays the role of noise.

Keywords

integrated circuit interconnections; three-dimensional integrated circuits; 3D-IC; RDL interconnection; RF signal communication; SNR; Si; TSV interconnection; analogue signal analysis; data rate; eye diagram; high speed signal communication; noisy environment; parasitic signal; realistic digital communication; signal amplitude; signal integrity impact evaluation; signal shape; signal to noise ratio; signal transmission integrity; silicon substrate coupling phenomena effect; Conductivity; Couplings; Noise; Silicon; Substrates; Through-silicon vias; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

978-1-4673-1966-9

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2012.6248929

Filename

6248929