Title :
Effects of silicon substrate coupling phenomena on signal integrity for RF or high speed communications in 3D-IC
Author :
Eid, E. ; Lacrevaz, T. ; Houzet, G. ; Bermond, C. ; Fléchet, B. ; Farcy, A. ; Calmon, F. ; Leduc, P.
Author_Institution :
IMEP-LAHC, Univ. de Savoie, Le Bourget du Lac, France
fDate :
May 29 2012-June 1 2012
Abstract :
This paper proposes studies to learn more about substrate coupling phenomena in 3D-IC by evaluating their impact on signals integrity. Studies consist in analysing analogue signals and realistic digital communications while respectively RF or high speed signals are carried by interconnections such as TSV and RDL in noisy environment. Integrity of transmitted signals is analyzed in terms of signal amplitude, signal shape, SNR (signal to noise ratio), data rate and eye diagrams when a chosen parasitic signal plays the role of noise.
Keywords :
integrated circuit interconnections; three-dimensional integrated circuits; 3D-IC; RDL interconnection; RF signal communication; SNR; Si; TSV interconnection; analogue signal analysis; data rate; eye diagram; high speed signal communication; noisy environment; parasitic signal; realistic digital communication; signal amplitude; signal integrity impact evaluation; signal shape; signal to noise ratio; signal transmission integrity; silicon substrate coupling phenomena effect; Conductivity; Couplings; Noise; Silicon; Substrates; Through-silicon vias; Transfer functions;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6248929
