DocumentCode :
2723193
Title :
A high-speed pin-memory architecture using multiport dynamic RAMs
Author :
Tsai, Sheng-Jen ; Lee, Wha-Joon
Author_Institution :
AT&T Bell Lab., Princeton, NJ, USA
fYear :
1990
fDate :
10-14 Sep 1990
Firstpage :
347
Lastpage :
354
Abstract :
The authors describe a novel pin-memory design based on multiport dynamic video RAMs (VRAMs). Each pin (or channel) has a 512 K pattern depth allows a 100-MHz vector rate, and is economical in both size (3×1.5 in) and cost (less than $100). These achievements were made possible by a VRAM-oriented pin-memory architecture and the associated memory control circuitry, which are instrumental in facilitating the following features: the arbitration of the read/write and refresh operations, the coordination of two processors that access the memory at different stages of a test cycle, the provision for as many pins as possible to share components to reduce the overall cost and space, and the preservation of the independence of an individual pin so that it can be either active or idle for a particular burst regardless of the status of the others. The design described has been fully implemented in the High Speed Test System (HSTS) and functions successfully
Keywords :
DRAM chips; automatic testing; circuit CAD; memory architecture; storage management chips; 100 MHz; 512 KB; high-speed pin-memory architecture; memory control circuitry; read/write; refresh; ultiport dynamic RAMs; video RAMs; Circuit testing; Computer peripherals; Costs; Permission; Pins; Power generation economics; Random access memory; Read-write memory; Research and development; System testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference, 1990. Proceedings., International
Conference_Location :
Washington, DC
Print_ISBN :
0-8186-9064-X
Type :
conf
DOI :
10.1109/TEST.1990.114041
Filename :
114041
Link To Document :
بازگشت