Title :
A field programmable 40-nm pure CMOS embedded memory macro using a PMOS antifuse
Author :
Kaku, Daichi ; Namekawa, Toshimasa ; Matsufuji, Kensuke ; Wada, Osamu ; Ito, Hiroshi ; Sugisawa, Yoshinori ; Shimizu, Sakiko ; Yamamoto, Takeshi ; Honda, Kenji ; Hamada, Mototsugu ; Numata, Kenji
Author_Institution :
Syst. LSI Design Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
A pure CMOS one-time programmable memory (PCOP) macro using a PMOS antifuse is designed for field programming. In this work, a temperature-controlled programming voltage generator (TVG) realizes field programming by improving programming characteristics over a wide temperature range, from -40° C to 125° C, and supply voltage variations of ±10%. In addition, the memory cell dimensions are optimized and reduced by 40%, which also results in better reading characteristics. PCOP has a 16-Kbit capacity, uses 1.1-V and 3.3-V power sources, occupies 0.2242 mm and is implemented in a 40-nm pure CMOS logic technology with thin and thick oxide film transistors.
Keywords :
CMOS logic circuits; CMOS memory circuits; cellular arrays; power supply circuits; programmable logic arrays; CMOS logic technology; PCOP macro; PMOS antifuse; TVG; field programmable CMOS embedded memory macro; memory cell dimensions; pure CMOS one-time programmable memory macro; size 40 nm; storage capacity 16 Kbit; temperature -40 degC to 125 degC; temperature-controlled programming voltage generator; thick oxide film transistors; thin oxide film transistors; voltage 1.1 V; voltage 3.3 V; CMOS logic circuits; CMOS memory circuits; CMOS technology; Character generation; Costs; Fuses; MOSFETs; Solid state circuit design; Temperature sensors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2009. A-SSCC 2009. IEEE Asian
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4433-5
Electronic_ISBN :
978-1-4244-4434-2
DOI :
10.1109/ASSCC.2009.5357155
