• DocumentCode
    2723596
  • Title

    Stoichiometric low loss Tellurium Oxide thin films for photonic applications

  • Author

    Vu, Khu T. ; Madden, Steve J. ; Luther-Davies, Barry ; Bulla, Douglas

  • Author_Institution
    Laser Phys. Centre, Australian Nat. Univ., Canberra, ACT
  • fYear
    2008
  • fDate
    7-10 July 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Stoichiometric low loss tellurium oxide, TeO2, films have been produced by reactive RF sputtering. TeO2 films with propagation loss below 0.1 dB/cm at 1550 nm have been achieved in as deposited films.
  • Keywords
    optical films; optical losses; sputter deposition; stoichiometry; tellurium compounds; thin films; TeO2; propagation loss; reactive RF sputtering; stoichiometric low loss thin films; Annealing; Glass; Optical films; Optical losses; Oxygen; Radio frequency; Silicon compounds; Sputtering; Tellurium; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
  • Conference_Location
    Sydney
  • Print_ISBN
    978-0-85825-807-5
  • Electronic_ISBN
    978-0-85825-807-5
  • Type

    conf

  • DOI
    10.1109/OECCACOFT.2008.4610455
  • Filename
    4610455