DocumentCode :
2723596
Title :
Stoichiometric low loss Tellurium Oxide thin films for photonic applications
Author :
Vu, Khu T. ; Madden, Steve J. ; Luther-Davies, Barry ; Bulla, Douglas
Author_Institution :
Laser Phys. Centre, Australian Nat. Univ., Canberra, ACT
fYear :
2008
fDate :
7-10 July 2008
Firstpage :
1
Lastpage :
2
Abstract :
Stoichiometric low loss tellurium oxide, TeO2, films have been produced by reactive RF sputtering. TeO2 films with propagation loss below 0.1 dB/cm at 1550 nm have been achieved in as deposited films.
Keywords :
optical films; optical losses; sputter deposition; stoichiometry; tellurium compounds; thin films; TeO2; propagation loss; reactive RF sputtering; stoichiometric low loss thin films; Annealing; Glass; Optical films; Optical losses; Oxygen; Radio frequency; Silicon compounds; Sputtering; Tellurium; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location :
Sydney
Print_ISBN :
978-0-85825-807-5
Electronic_ISBN :
978-0-85825-807-5
Type :
conf
DOI :
10.1109/OECCACOFT.2008.4610455
Filename :
4610455
Link To Document :
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