DocumentCode :
2723641
Title :
3D-TSV vertical interconnection method using Cu/SnAg double bumps and B-stage non-conductive adhesives (NCAs)
Author :
Choi, Yongwon ; Shin, Jiwon ; Paik, Kyung-Wook
Author_Institution :
Dept. of Mater. Sci. & Eng., KAIST, Daejeon, South Korea
fYear :
2012
fDate :
May 29 2012-June 1 2012
Firstpage :
1077
Lastpage :
1080
Abstract :
In this study, the chip to chip eutectic solder bonding method using NCAs for TSV stacking was investigated as an alternative 3D-TSV interconnection method. The non-conductive polymer adhesive was applied at TSV wafers as a film format before eutectic solder bonding resulting in no extra underfill process. The electrical interconnections between micro-sized bumps for TSVs of the stacked chips were investigated. The electrical interconnection through the arrays of the bumps between two chips showed no change even after the reliability tests which meant that vertical interconnection by one step metal/polymer hybrid bonding was rapid as well as stable.
Keywords :
adhesives; copper; polymers; semiconductor device metallisation; solders; three-dimensional integrated circuits; tin compounds; 3D-TSV vertical interconnection method; B-stage nonconductive polymer adhesive; Cu-SnAg; NCA; double bumps; electrical interconnections; eutectic solder bonding method; microsized bumps; one step metal-polymer hybrid bonding; reliability tests; Bonding; Joints; Stacking; Temperature measurement; Through-silicon vias; Viscosity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2012.6248969
Filename :
6248969
Link To Document :
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