Title :
A DVS embedded power management for high efficiency integrated SOC in UWB system
Author :
Lee, Yu-Huei ; Wang, Shih-Jung ; Yang, Yao-Yi ; Zheng, Kuo-Lin ; Chen, Po-Fung ; Hsieh, Chun-Yu ; Ke, Yu-Zhou ; Chen, Ke-Horng ; Chen, Yi-Kuang ; Huang, Chen-Chih ; Lin, Ying-Hsi
Author_Institution :
Dept. of Electr. & Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The proposed power management module with 1 V low-voltage PWM controller and dynamic self-biasing mechanism is designed to integrate with ultra-wide band (UWB) system. The on-chip pre-regulator with power conditioning circuit provides a constant and noiseless supply voltage. Instead of using large external compensation circuit, the compensation enhancement multistage amplifier increases system loop gain and stabilizes the system. Moreover, the proposed self-biasing mechanism enhances the power conversion efficiency by 4 % through the handover technique. The fabricated power management module occupies 0.356 mm2 silicon in 65 nm CMOS. With the excellent line/load transient response and the highest efficiency about 93.5%, the proposed power management has the qualification to be integrated in today´s system-on-chip (SoC) applications.
Keywords :
CMOS integrated circuits; amplifiers; elemental semiconductors; low-power electronics; nanoelectronics; power conversion; power supplies to apparatus; pulse width modulation; silicon; system-on-chip; ultra wideband technology; DVS embedded power management; Si; compensation enhancement multistage amplifier; dynamic self-biasing mechanism; dynamic voltage scaling; handover technique; high efficiency integrated SoC; line-load transient response; low-voltage PWM controller; noiseless supply voltage; on-chip preregulator; power conditioning circuit; power conversion efficiency; pulse width modulation; size 65 nm; system loop gain; system-on-a-chip design; ultrawide band system; Circuits; Control systems; Energy management; Power conditioning; Power conversion; Power system management; Pulse width modulation; Silicon; Transient response; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 2009. A-SSCC 2009. IEEE Asian
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4433-5
Electronic_ISBN :
978-1-4244-4434-2
DOI :
10.1109/ASSCC.2009.5357159