3–5GHz IR-UWB timed array transmitter in 0.18μm CMOS

Author

Diao, Shengxi ; Zheng, Yuanjin ; Gao, Yuan ; Yuan, Xiaojun ; Heng, Chun Huat

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2009

fDate

16-18 Nov. 2009

Firstpage

365

Lastpage

368

Abstract

This paper presents a dual-channel timed array transmitter for impulse radio ultra wide band wireless communication system. The transmitter can generate UWB pulses in two separate transmitter paths with tunable path delay difference of 0˜250 ps to achieve beamforming capability. Through injection locking with 800 MHz input reference, the generated UWB pulse centers at 4 GHz and covers 3˜5 GHz band with 10-dB side-lobe rejection. Fabricated in 0.18 μm CMOS technology, the transmitter consumes 37 mA at 10 Mbps under 1.8 V supply.

Keywords

CMOS integrated circuits; microwave integrated circuits; radio transmitters; ultra wideband communication; CMOS technology; IR-UWB timed array transmitter; UWB pulses; beamforming capability; bit rate 10 Mbit/s; current 37 mA; dual-channel timed array transmitter; frequency 3 GHz to 5 GHz; frequency 4 GHz; frequency 800 MHz; impulse radio ultra wide band wireless communication system; injection locking; size 0.18 μm; transmitter paths; tunable path delay; voltage 1.8 V; Array signal processing; CMOS technology; Delay effects; Phase locked loops; Phased arrays; Pulse amplifiers; Pulse generation; Radio transmitters; Switches; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2009. A-SSCC 2009. IEEE Asian

Conference_Location

Taipei

Print_ISBN

978-1-4244-4433-5

Electronic_ISBN

978-1-4244-4434-2

Type

conf

DOI

10.1109/ASSCC.2009.5357171

Filename

5357171