• DocumentCode
    2723908
  • Title

    Prediction of tin-whiskers generation during thermal cycle test using stress and mass-diffusion analysis

  • Author

    Terasaki, Takeshi ; Kato, Takahiko ; Iwasaki, Tomio ; Ookura, Yasutaka ; Nakamura, Masato ; Ishii, Hideki ; Yamamoto, Kenji

  • Author_Institution
    Hitachi, Ltd., Hitachinaka, China
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    1183
  • Lastpage
    1189
  • Abstract
    A previously developed simulation technique has been applied to the prediction of the location of tin whiskers, which create reliability problems, generated on electrodeposited tin plating on a copper lead frame. This multi-scale simulation technique uses molecular dynamics simulation and a finite element method (FEM). The FEM model is used to simulate stress and stress-induced mass diffusion, including grain-boundary diffusion, in tin plating. The stress analysis model considers elasticity anisotropy, thermal-expansion anisotropy, and the crystal orientation of ß-tin. A thermal cycling test was conducted to induce whisker generation on tin-plated specimens, and the crystalline orientations around the whiskers were evaluated using electron back-scattering diffraction pattern (EBSP) measurement. The hydrostatic pressure distribution and tin-atomic-density distribution in the specimens were calculated using a simulation technique that considers the crystal orientations of the β-tin grains determined using EBSP measurement. The results were used to investigate the relationship between the tin-atomic-density distribution and whisker locations. The whisker locations corresponded to the areas of higher tin-atomic density and lower hydrostatic pressure on the tin-plated surface, indicating that the previously developed simulation technique can be used to predict the location of whiskers generated on tin plating.
  • Keywords
    copper; crystal orientation; electroplated coatings; finite element analysis; grain boundary diffusion; tin; whiskers (crystal); Sn-Cu; atomic density distribution; crystal orientation; elasticity anisotropy; electrodeposited plating; electron back scattering diffraction pattern; finite element method; grain boundary diffusion; hydrostatic pressure distribution; lead frame; mass diffusion analysis; molecular dynamics simulation; reliability problem; stress analysis; stress induced mass diffusion; thermal cycle test; thermal expansion anisotropy; whiskers generation; Atomic measurements; Compressive stress; Copper; Crystals; Finite element methods; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248986
  • Filename
    6248986