Title :
EEODM: An effective BIST scheme for ROMs
Author :
Zorian, Yervant ; Ivanov, André
Author_Institution :
AT&T Bell Lab., Princeton, NJ, USA
Abstract :
The authors propose a novel BIST (built-in self-test) scheme for ROMs that has an extremely low possibility of error escape. The scheme is referred to as exhaustive enhanced output data modification (EEODM). For the test generation. EEODM uses the exhaustive test technique. This guarantees the complete coverage of all combinational faults in the ROM. For output data compaction, EEODM uses an enhanced form of output data modification (ODM), along with bidirectional polynomial division. The hardware and test-time overhead was compared with that associated with other known BIST schemes. EEODM turns out to be very attractive, since it achieves much higher fault coverage than any of the other known schemes, and yet the associated overhead is very reasonable
Keywords :
automatic testing; built-in self test; integrated circuit testing; integrated memory circuits; logic testing; read-only storage; BIST; ROMs; combinational faults; error escape; exhaustive enhanced output data modification; output data compaction; output data modification; test-time overhead; Automatic testing; Built-in self-test; Circuit faults; Circuit testing; Compaction; Controllability; EPROM; PROM; Polynomials; Read only memory;
Conference_Titel :
Test Conference, 1990. Proceedings., International
Conference_Location :
Washington, DC
Print_ISBN :
0-8186-9064-X
DOI :
10.1109/TEST.1990.114105