DocumentCode :
2724277
Title :
Digital Array Radar panel development
Author :
Chappell, William ; Fulton, Caleb
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
fYear :
2010
fDate :
12-15 Oct. 2010
Firstpage :
50
Lastpage :
60
Abstract :
The Army Digital Array Radar (DAR) project´s goal is to demonstrate how wide-bandgap semiconductor technology, highly-integrated transceivers, and the ever-increasing capabilities of commercial digital components can be leveraged to provide new capabilities and enhanced performance in future low-cost phased array systems. A 16-element, S-band subarray has been developed with panel-integrated, plastic-packaged gallium-nitride (GaN) amplifiers, multi-channel transceiver ICs, and digitization at the element level. In addition to full digital beamforming on transmit and receive, the DAR subarray has demonstrated efficient RF power generation exceeding 25 Watts per element, in-situ, element-level calibration monitoring and self-correction capabilities, simultaneous transmit and receive operation through subarray partitioning for an indoor target tracker, and more. An overview is given of these results and capabilities.
Keywords :
amplifiers; array signal processing; microwave antenna arrays; phased array radar; transceivers; wide band gap semiconductors; DAR subarray; S-band subarray systems; army digital array radar panel development; beamforming; multichannel transceiver IC; phased array radar; plastic-packaged gallium-nitride amplifiers; wide-bandgap semiconductor technology; Antennas; Array signal processing; Arrays; Calibration; Field programmable gate arrays; Gallium nitride; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Phased Array Systems and Technology (ARRAY), 2010 IEEE International Symposium on
Conference_Location :
Waltham, MA
Print_ISBN :
978-1-4244-5127-2
Electronic_ISBN :
978-1-4244-5128-9
Type :
conf
DOI :
10.1109/ARRAY.2010.5613391
Filename :
5613391
Link To Document :
بازگشت