DocumentCode
2724277
Title
Digital Array Radar panel development
Author
Chappell, William ; Fulton, Caleb
Author_Institution
Purdue Univ., West Lafayette, IN, USA
fYear
2010
fDate
12-15 Oct. 2010
Firstpage
50
Lastpage
60
Abstract
The Army Digital Array Radar (DAR) project´s goal is to demonstrate how wide-bandgap semiconductor technology, highly-integrated transceivers, and the ever-increasing capabilities of commercial digital components can be leveraged to provide new capabilities and enhanced performance in future low-cost phased array systems. A 16-element, S-band subarray has been developed with panel-integrated, plastic-packaged gallium-nitride (GaN) amplifiers, multi-channel transceiver ICs, and digitization at the element level. In addition to full digital beamforming on transmit and receive, the DAR subarray has demonstrated efficient RF power generation exceeding 25 Watts per element, in-situ, element-level calibration monitoring and self-correction capabilities, simultaneous transmit and receive operation through subarray partitioning for an indoor target tracker, and more. An overview is given of these results and capabilities.
Keywords
amplifiers; array signal processing; microwave antenna arrays; phased array radar; transceivers; wide band gap semiconductors; DAR subarray; S-band subarray systems; army digital array radar panel development; beamforming; multichannel transceiver IC; phased array radar; plastic-packaged gallium-nitride amplifiers; wide-bandgap semiconductor technology; Antennas; Array signal processing; Arrays; Calibration; Field programmable gate arrays; Gallium nitride; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Phased Array Systems and Technology (ARRAY), 2010 IEEE International Symposium on
Conference_Location
Waltham, MA
Print_ISBN
978-1-4244-5127-2
Electronic_ISBN
978-1-4244-5128-9
Type
conf
DOI
10.1109/ARRAY.2010.5613391
Filename
5613391
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