DocumentCode :
27243
Title :
Switching of whispering gallery mode in hexagonal GaN microdisk by change in condition of reflection surface
Author :
Kouno, T. ; Sakai, Masayuki ; Kishino, Katsumi ; Hara, Kentaro
Author_Institution :
Dept. of Electron. & Mater. Sci., Shizuoka Univ., Hamamatsu, Japan
Volume :
51
Issue :
2
fYear :
2015
fDate :
1 22 2015
Firstpage :
170
Lastpage :
172
Abstract :
Optical microresonant mode switching in a hexagonal GaN microdisk, which acts as a whispering gallery mode (WGM) and quasi-WGM (QWGM), has been demonstrated by a change in the condition of the reflection surface under a room temperature photoluminescence (RT-PL) measurement. It has been confirmed that only the WGM in the microdisk, which uses all side walls of a microdisk as the reflection surface, was strongly affected by attaching another microdisk on a side wall. The result indicates that the WGM can be controlled independently by external factors.
Keywords :
III-V semiconductors; gallium compounds; light reflection; microcavities; micromechanical resonators; optical switches; optical variables measurement; photoluminescence; whispering gallery modes; wide band gap semiconductors; GaN; QWGM; RT-PL measurement; hexagonal GaN microdisk; optical microresonant mode switching; quasiwhispering galley mode; reflection surface; room temperature photoluminescence measurement; side wall; temperature 293 K to 298 K;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.3724
Filename :
7014450
Link To Document :
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