• DocumentCode
    2724367
  • Title

    Contact resistance in PTC thermistors

  • Author

    Park, C.W. ; Cho, K.H. ; Lee, J.Y. ; Lee, H.Y.

  • Author_Institution
    Sch. of Metall. & Mater. Eng., Yeungnam Univ., Kyongsan, South Korea
  • Volume
    2
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    995
  • Abstract
    The electrode resistance of semiconducting PTC BaTiO3 ceramic was studied in same detail. Commercial In-Ag paste, In-Ga alloy, and electroless plated Ni as well as evaporated Al with and without Pt overcoat layer mere chosen as electrode. The contact resistance of electroded samples at or above room temperature was determined using both dc resistance and ac impedance measurements. The aging of contact resistance under cyclic loading from -10 to 85°C was also monitored for the prolonged period of time. The effect of heat treatment and protective coating on the stability of Al electrode was determined. Commercial In-Ag paste showed the excellent stability against contact resistance degradation. However, the contact resistance of Al electrode during aging was strongly dependent on the annealing condition and the presence of protective layer
  • Keywords
    ageing; barium compounds; ceramics; contact resistance; electrodes; semiconductor materials; thermistors; -10 to 85 C; AC impedance; Al; BaTiO3; DC resistance; In-Ag; In-Ag paste; In-Ga; In-Ga alloy; Ni; PTC thermistor; Pt; Pt overcoat layer; aging; annealing; contact resistance; cyclic loading; electrode; electroless plated Ni; evaporated Al; heat treatment; protective coating; semiconducting BaTiO3 ceramic; stability; Aging; Aluminum alloys; Ceramics; Contact resistance; Electrodes; Nickel alloys; Protection; Semiconductivity; Stability; Thermistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.598196
  • Filename
    598196