DocumentCode
2724609
Title
The use of tolerance intervals in the characterization of semiconductor devices
Author
Hadeed, Yolanda T. ; Lewis, Kevin T.
Author_Institution
Harris Corp., Melbourne, FL, USA
fYear
1990
fDate
10-14 Sep 1990
Firstpage
924
Lastpage
928
Abstract
The authors discuss statistical intervals and provide an application of tolerance intervals to parametric characterization of semiconductor devices during the development cycle. Specifically, a methodology for computing two-sided tolerance intervals for a one-way random-effects model from a normal population is presented. The proposed approach is relevant to any industry in which batch processing exists
Keywords
batch processing (industrial); random processes; semiconductor device manufacture; semiconductor device testing; statistical analysis; batch processing; development cycle; normal population; one-way random-effects model; parametric characterization; semiconductor devices; statistical intervals; two-sided tolerance intervals; Aerospace industry; Contracts; Electronics industry; Gaussian distribution; Manufacturing industries; Procurement; Sampling methods; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 1990. Proceedings., International
Conference_Location
Washington, DC
Print_ISBN
0-8186-9064-X
Type
conf
DOI
10.1109/TEST.1990.114136
Filename
114136
Link To Document