Light emission from silicon solar cells as characterization technique

The paper describes local photoelectric measurement results obtained with monocrystalline silicon solar cell in visible light. The measurement allows localize a weak light emission from defects at reverse bias voltage as low as 3 V, which does not exhibit any relation to current-voltage characteristics (no local breakdowns). Other types of defects observed under forward bias using electroluminescence (EL) and light induced beam current (LBIC) techniques are also visualized. The measurements should contribute to find a correlation between EL and modified LBIC results.