DocumentCode :
2724674
Title :
Weak inversion for ultra low-power and very low-voltage circuits
Author :
Vittoz, Eric A.
Author_Institution :
EPFL, Lausanne, Switzerland
fYear :
2009
fDate :
16-18 Nov. 2009
Firstpage :
129
Lastpage :
132
Abstract :
This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called sub-threshold mode. In analog circuits, w.i. is reached at very low current, but it is also needed for very low supply voltage. Its exponential behaviour can be exploited in special circuits schemes, some of them devised for bipolar transistors. For digital circuits, it can provide the ultimate speed/power ratio in a given process.
Keywords :
CMOS integrated circuits; MOSFET; bipolar transistors; integrated circuit design; low-power electronics; CMOS technology; MOS transistors; analog circuits; bipolar transistors; digital circuits; low-voltage circuit; speed-power ratio; subthreshold mode operated transistors; ultralow-power circuit; weak inversion; Analog circuits; Bipolar transistors; CMOS technology; Digital circuits; Energy consumption; Low voltage; MOSFETs; Solid state circuits; Threshold voltage; Watches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2009. A-SSCC 2009. IEEE Asian
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4433-5
Electronic_ISBN :
978-1-4244-4434-2
Type :
conf
DOI :
10.1109/ASSCC.2009.5357240
Filename :
5357240
Link To Document :
بازگشت