DocumentCode
2724679
Title
RTS noise amplitude and electron concentration in MOSFETs
Author
Pavelka, J. ; Sikula, J. ; Chvatal, M. ; Tacano, M. ; Toita, M.
Author_Institution
Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
fYear
2010
fDate
16-19 May 2010
Firstpage
475
Lastpage
478
Abstract
Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from sub threshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed. Numerical model of charge carrier transport in the channel was used to estimate trap position between the source and drain electrodes from experimental characteristics.
Keywords
MOSFET; electric fields; semiconductor device noise; MOSFET; RTS noise amplitude; charge carrier transport; electric field; electron concentration; random telegraph signal noise; Charge carriers; Electric variables measurement; Electron emission; MOSFETs; Noise level; Noise measurement; Numerical models; Signal analysis; Telegraphy; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-7200-0
Type
conf
DOI
10.1109/MIEL.2010.5490439
Filename
5490439
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