Title :
RTS noise amplitude and electron concentration in MOSFETs
Author :
Pavelka, J. ; Sikula, J. ; Chvatal, M. ; Tacano, M. ; Toita, M.
Author_Institution :
Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
Abstract :
Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from sub threshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed. Numerical model of charge carrier transport in the channel was used to estimate trap position between the source and drain electrodes from experimental characteristics.
Keywords :
MOSFET; electric fields; semiconductor device noise; MOSFET; RTS noise amplitude; charge carrier transport; electric field; electron concentration; random telegraph signal noise; Charge carriers; Electric variables measurement; Electron emission; MOSFETs; Noise level; Noise measurement; Numerical models; Signal analysis; Telegraphy; Time measurement;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490439
