Title :
Phase modulator with InGaAs/InAlAs FACQW grown by MOVPE
Author :
Hasegawa, Ryo ; Sawai, Yutaka ; Amemiya, Tomohiro ; Arakawa, Taro ; Tanemura, Takuo ; Simizu, Hiromasa ; Tada, Kunio ; Nakano, Yoshiaki
Author_Institution :
Yokohama Nat. Univ., Yokohama
Abstract :
The optical properties of InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) grown by MOVPE are investigated. The FACQW phase modulator is fabricated and its large phase shift is successfully observed.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical modulation; phase modulation; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAs-InAlAs; MOVPE; five-layer asymmetric coupled quantum well; optical properties; phase modulator; phase shift; Absorption; Chirp modulation; Epitaxial growth; Epitaxial layers; Indium compounds; Indium gallium arsenide; Optical modulation; Optical waveguides; Phase modulation; Ultrafast optics;
Conference_Titel :
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location :
Sydney
Print_ISBN :
978-0-85825-807-5
Electronic_ISBN :
978-0-85825-807-5
DOI :
10.1109/OECCACOFT.2008.4610533
