Title :
Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs
Author :
Fathallah, O. ; Gassoumi, M. ; Saadaoui, S. ; Grimbert, B. ; Gaquiere, C. ; Maaref, H.
Author_Institution :
Lab. de Phys. des Semicond. et des Composants Electron., Fac. des Sci. de Monastir, Monastir, Tunisia
Abstract :
The transient behaviors of AlGaN/GaN HEMTs were studied by conductance deep level transient spectroscopy. Deep levels in HEMTs are known to be responsible for trapping processes like: kink effect and degradation in saturation current. Three electron traps were observed. An additional “hole-like” level with activation energy of 0.43 eV is obtained. They were attributed these levels with surface states.
Keywords :
electron traps; high electron mobility transistors; AlGaN; GaN; HEMT; SiC; conductance deep level transient spectroscopy; deep defect; drain width; electrical behavior; electron traps; kink effect; saturation current; transient behavior; trapping process; Aluminum gallium nitride; Capacitance; Electron traps; Gallium nitride; HEMTs; MODFETs; Microelectronics; Pulse measurements; Silicon carbide; Spectroscopy; AlGaN/GaN; CDLTS; Surface traps;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490440
