Title :
Absorption saturation of AlN-based waveguide utilizing intersubband transition in GaN/AlN quantum wells
Author :
Iizuka, Norio ; Shimizu, Toshimasa ; Cumtornkittikul, Chaiyasit ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Corp. R & D Center, Toshiba Corp., Kawasaki
Abstract :
An AlN-based intersubband optical switch was investigated. Narrow absorption spectrum and low insertion loss were obtained. Absorption saturation by 10 dB was achieved at a wavelength of 1.42 mum with an energy of 50 pJ.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; optical switches; optical waveguides; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; absorption saturation; absorption spectrum; insertion loss; intersubband optical switch; intersubband transition; quantum wells; waveguide utilizing; Absorption; Gallium nitride; High speed optical techniques; Insertion loss; Molecular beam epitaxial growth; Optical devices; Optical switches; Optical waveguides; Quantum well devices; Waveguide transitions;
Conference_Titel :
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location :
Sydney
Print_ISBN :
978-0-85825-807-5
Electronic_ISBN :
978-0-85825-807-5
DOI :
10.1109/OECCACOFT.2008.4610534
