DocumentCode
2724751
Title
Amorphous silicon balanced photodiode for application in biomolecular analysis
Author
Caputo, D. ; De Cesare, G. ; Nascetti, A. ; Scipinotti, R.
Author_Institution
Dept. of Electron. Eng., Univ. of Rome La Sapienza, Rome, Italy
fYear
2009
fDate
25-26 June 2009
Firstpage
15
Lastpage
19
Abstract
In this work we present an amorphous silicon/amorphous silicon carbide balanced photodiode structure suitable for differential photocurrent measurements in the ultraviolet (UV) and visible range. The device is a three-terminal structure constituted by two series-connected amorphous silicon p-i-n photodiodes. The structure takes advantage of the differential measurement to reveal very small variations of photocurrent in a large background current signal. Application of the device in detection of biomolecules based on the use of photosensors, can allow the increase of both the dynamic range and the sensitivity of the measurement. Several balanced structures with different geometries have been fabricated utilizing a four mask-step process. The devices have been characterized by measuring the common mode rejection ratio as a function of radiation intensity and wavelength and of bias voltage. Experimental results demonstrated that in dark condition differential currents three orders of magnitude lower than the current of each sensor are detected, while under ultraviolet illumination CMRR values around 40 dB have been achieved independent on the bias voltage. These performances are comparable with those obtained by crystalline differential photodiode structures.
Keywords
amorphous semiconductors; biomolecular electronics; elemental semiconductors; masks; p-i-n photodiodes; photodetectors; silicon; silicon compounds; ultraviolet spectra; visible spectra; wide band gap semiconductors; Si-SiC; amorphous silicon-amorphous silicon carbide balanced photodiode; background current signal; bias voltage; biomolecular analysis; common mode rejection ratio; crystalline differential photodiode structures; dark condition; mask-step process; photocurrent measurements; photosensors; radiation intensity; three-terminal structure; two series-connected amorphous silicon p-i-n photodiodes; ultraviolet spectra; visible range spectra; Amorphous silicon; Current measurement; Dynamic range; Geometry; Molecular biophysics; PIN photodiodes; Photoconductivity; Sensor phenomena and characterization; Voltage; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in sensors and Interfaces, 2009. IWASI 2009. 3rd International Workshop on
Conference_Location
Trani
Print_ISBN
978-1-4244-4708-4
Electronic_ISBN
978-1-4244-4709-1
Type
conf
DOI
10.1109/IWASI.2009.5184760
Filename
5184760
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