• DocumentCode
    2724751
  • Title

    Amorphous silicon balanced photodiode for application in biomolecular analysis

  • Author

    Caputo, D. ; De Cesare, G. ; Nascetti, A. ; Scipinotti, R.

  • Author_Institution
    Dept. of Electron. Eng., Univ. of Rome La Sapienza, Rome, Italy
  • fYear
    2009
  • fDate
    25-26 June 2009
  • Firstpage
    15
  • Lastpage
    19
  • Abstract
    In this work we present an amorphous silicon/amorphous silicon carbide balanced photodiode structure suitable for differential photocurrent measurements in the ultraviolet (UV) and visible range. The device is a three-terminal structure constituted by two series-connected amorphous silicon p-i-n photodiodes. The structure takes advantage of the differential measurement to reveal very small variations of photocurrent in a large background current signal. Application of the device in detection of biomolecules based on the use of photosensors, can allow the increase of both the dynamic range and the sensitivity of the measurement. Several balanced structures with different geometries have been fabricated utilizing a four mask-step process. The devices have been characterized by measuring the common mode rejection ratio as a function of radiation intensity and wavelength and of bias voltage. Experimental results demonstrated that in dark condition differential currents three orders of magnitude lower than the current of each sensor are detected, while under ultraviolet illumination CMRR values around 40 dB have been achieved independent on the bias voltage. These performances are comparable with those obtained by crystalline differential photodiode structures.
  • Keywords
    amorphous semiconductors; biomolecular electronics; elemental semiconductors; masks; p-i-n photodiodes; photodetectors; silicon; silicon compounds; ultraviolet spectra; visible spectra; wide band gap semiconductors; Si-SiC; amorphous silicon-amorphous silicon carbide balanced photodiode; background current signal; bias voltage; biomolecular analysis; common mode rejection ratio; crystalline differential photodiode structures; dark condition; mask-step process; photocurrent measurements; photosensors; radiation intensity; three-terminal structure; two series-connected amorphous silicon p-i-n photodiodes; ultraviolet spectra; visible range spectra; Amorphous silicon; Current measurement; Dynamic range; Geometry; Molecular biophysics; PIN photodiodes; Photoconductivity; Sensor phenomena and characterization; Voltage; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in sensors and Interfaces, 2009. IWASI 2009. 3rd International Workshop on
  • Conference_Location
    Trani
  • Print_ISBN
    978-1-4244-4708-4
  • Electronic_ISBN
    978-1-4244-4709-1
  • Type

    conf

  • DOI
    10.1109/IWASI.2009.5184760
  • Filename
    5184760