Title :
Comparison of GaN-based MOS structures with different interfacial layer treatments
Author :
Al Alam, Elias ; Cortes, I. ; Besland, M.P. ; Regreny, P. ; Goullet, A. ; Morancho, F. ; Cazarre, A. ; Cordier, Y. ; Isoird, K. ; Olivie, F.
Author_Institution :
CNRS-LAAS, Univ. de Toulouse, Toulouse, France
Abstract :
In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 °C) on an N-type GaN epitaxial layer using different technological procedures have been performed to analyze the quality and reliability of the resultant SiO2/GaN interface in MOS structures. C-V measures at different temperatures have been also performed to analyze the pyroelectric effect in all the GaN samples.
Keywords :
III-V semiconductors; MOS capacitors; electrical conductivity; gallium compounds; plasma CVD; pyroelectricity; semiconductor epitaxial layers; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; C-V characteristics; GaN-based MOS capacitors; SiO2-GaN; epitaxial layer; interfacial layer treatment; low temperature deposition; plasma-enhanced chemical-vapor-deposition; pyroelectric effect; temperature 300 degC; Capacitance-voltage characteristics; Chemical analysis; Chemical technology; Gallium nitride; MOS capacitors; Performance analysis; Plasma chemistry; Plasma measurements; Plasma temperature; Temperature measurement;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490444
