Title :
Random Telegraph Noise characterization of p-type silicon nanowire FinFETs
Author :
Mukherjee, C. ; Maiti, T.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
Random Telegraph Noise (RTN) characteristics of p-type silicon nanowire FinFET have been studied. It is shown that from multilevel RTN noise characteristics the presence of multiple traps inside the gate oxide may be predicted.
Keywords :
MOSFET; nanowires; random noise; silicon; Si; gate oxide; multilevel RTN noise characteristics; multiple traps; p-type silicon nanowire FinFET; random telegraph noise characterization; Channel bank filters; Electron emission; Electron traps; FinFETs; Low-frequency noise; Microelectronics; Potential well; Silicon; Telegraphy; Voltage; capture and emission time; complex RTS; nanowire FinFETs; random telegraph noise; surface potential; trap;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490445
