• DocumentCode
    2724857
  • Title

    Doping of Ta2O5 as a way to extend its potential for DRAM applications

  • Author

    Atanassova, E. ; Paskaleva, A. ; Spassov, D.

  • Author_Institution
    Inst. of Solid St. Phys., Bulg. Acad. of Sci., Sofia, Bulgaria
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    427
  • Lastpage
    434
  • Abstract
    The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to tailor Ta2O5 properties towards meeting the criteria for future technological nodes are discussed. Essential in the engineering of advanced DRAM storage capacitors parameters and characteristics of Ti-doped Ta2O5, Hf-doped Ta2O5 and mixed HfO2-Ta2O5 layers as an illustration of both the benefits and the disadvantages of modified Ta2O5-based stacks are presented.
  • Keywords
    DRAM chips; capacitors; dielectric materials; semiconductor doping; tantalum compounds; DRAM storage capacitors; Ta2O5; doping; high-k dielectric; Capacitors; Crystalline materials; Crystallization; Doping; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Random access memory; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490449
  • Filename
    5490449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2724857