Title :
RF compact small-signal model for SOI DG-MOSFETs
Author :
Cerdeira, A. ; Tinoco, J.C. ; Estrada, M. ; Raskin, J. -P
Author_Institution :
Depto. de Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico
Abstract :
A compact model for small-signal equivalent circuit of DG-MOSFETs is presented. The intrinsic parameters are obtained from DC analytic compact model. This DC model allows determining the mobile charge inside the transistor channel, from which the intrinsic parameters are derived. Additionally, the extrinsic capacitances are calculated and included into the model. This compact small-signal model allows determining the transistor RF behavior at different bias conditions and for different technological parameters in a more simple and precise way.
Keywords :
MOSFET; silicon-on-insulator; DC analytic compact model; RF compact small-signal model; SOI DG-MOSFET; mobile charge; small-signal equivalent circuit; transistor RF behavior; transistor channel; Analytical models; CMOS technology; Capacitance; Doping; Equivalent circuits; Impedance; MOSFETs; Radio frequency; Semiconductor process modeling; Silicon on insulator technology;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490458
