SOI digital pixel sensor based on charge pumping

Author

Harik, Louis ; Sallese, Jean-Michel ; Kayal, Maher

Author_Institution

Electr. Eng., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2009

fDate

25-26 June 2009

Firstpage

104

Lastpage

109

Abstract

In this paper, a digital pixel sensor in SOI is presented. The active part is a partially depleted SOI phototransistor. The technique elaborated in was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOI MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has sensitivity of 3 mW/m² and a resolution of about 7 bits. This pixel can be operated in two modes: weak inversion (I_dc = 1.2 muA) and moderate inversion (I_dc = 15 muA).

Keywords

MOSFET; charge pump circuits; delta-sigma modulation; image sensors; phototransistors; silicon compounds; silicon-on-insulator; MOSFET design; SOI digital pixel image sensor; Si-SiO₂; charge pumping; depleted SOI phototransistor; first order delta sigma modulator; CMOS image sensors; Charge pumps; Delta-sigma modulation; MOSFET circuits; Noise shaping; Optical sensors; Photoconductivity; Phototransistors; Quantization; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in sensors and Interfaces, 2009. IWASI 2009. 3rd International Workshop on

Conference_Location

Trani

Print_ISBN

978-1-4244-4708-4

Electronic_ISBN

978-1-4244-4709-1

Type

conf

DOI

10.1109/IWASI.2009.5184778

Filename

5184778