Title :
The impact of process faults on specific parameters of a 2.3GHz CMOS LNA
Author :
Karagounis, A. ; Kanapitsas, A. ; Kotsos, B. ; Tsonos, C. ; Polyzos, A. ; Petropoulou, E.
Author_Institution :
Dept. of Electron., Technol. Educ. Inst. of Lamia, Lamia, Greece
Abstract :
This paper presents the impact of process faults - such as parameter variations and process variations - on specific parameters of a low noise amplifier (LNA) - like noise figure (NF), linearity (1 dB CP, IP3), S-parameters (S11, S21) voltage output signal. A review of mathematical types that shows the relations between specifications and parameters of the LNA is a tool to explain the behavior of the circuit under the presence of process shifts and parasitic elements. A differential source degeneration LNA has been designed in a 90nm CMOS UMC technology to validate the theoretical conclusions and investigate if it is possible to restore the circuit prescriptions to the desired values, varying one or more parameters.
Keywords :
CMOS analogue integrated circuits; S-parameters; low noise amplifiers; CMOS LNA; CMOS UMC technology; S-parameter; differential source degeneration LNA; frequency 2.3 GHz; low noise amplifier; noise figure; parasitic element; process fault; size 90 nm; voltage output signal; CMOS process; CMOS technology; Circuit faults; Circuit noise; Linearity; Low-noise amplifiers; Noise figure; Noise measurement; Scattering parameters; Voltage;
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490478
