• DocumentCode
    2725386
  • Title

    The study of silicon passivation polymer adhesion to epoxy mold compound through button shear strength

  • Author

    Low, Shin ; Singh, Inderjit ; Mori, Takeshi ; Mori, Hironari

  • Author_Institution
    Xilinx Inc., San Jose, CA, USA
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    1684
  • Lastpage
    1686
  • Abstract
    When introducing new material, especially epoxy mold compound (EMC), there are always concerns on adhesion of the mold compound material to the interface of the silicon. Poor adhesion between the two interfaces will potentially cause reliability concerns such as delamination. In order to eliminate the reliability concerns, this study presents the effort to establish a quick and easy monitoring for JEDEC moisture sensitivity level (MSL) and multiple reflow tolerance between epoxy molding compound and silicon interface. For this study, silicon with passivation polymer surfaces is chosen as test vehicle. 2 different types of passivation and 3 different epoxy mold compounds were tested. We conducted MSL and multiple reflow tests with various test vehicles. Also button shear test was performed at various stages of moisture at elevated temperature. This is to simulate user environment in the fields. In this study we found different adhesion strength by mostly passivation type, also hint of relation between adhesion strength and real device reliability performance.
  • Keywords
    delamination; elemental semiconductors; passivation; reflow soldering; semiconductor device reliability; shear strength; silicon; JEDEC moisture sensitivity level; Si; button shear strength; delamination; device reliability; epoxy mold compound; mold compound material; multiple reflow tolerance; polymer adhesion; silicon interface; silicon passivation; Adhesives; Compounds; Delamination; Passivation; Plasmas; Polymers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6249065
  • Filename
    6249065