• DocumentCode
    2725394
  • Title

    Evolution of resist roughness during development: Stochastic simulation and dynamic scaling analysis

  • Author

    Constantoudis, V. ; Patsis, G.P. ; Gogolides, E.

  • Author_Institution
    Inst. of Microelectron., NCSR Demokritos, Aghia Paraskevi, Greece
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    The examination of the roughness evolution of open-surface resist films during development may elucidate the material origins of Line Edge Roughness. In this paper, a stochastic simulator of resist development is used and the surface roughness evolution is analyzed with dynamic scaling theory. A power-law increase of rms roughness and correlation length is found for resists with homogeneous solubility. The scaling exponents are shown to obey the dynamical scaling hypothesis of Family-Viscek. The insertion of inhomogeneity in the solubility of resist causes much larger increase of rms roughness and anomalous scaling behaviour. Comparison with experimental results shows good agreement with the simulation predictions.
  • Keywords
    resists; stochastic processes; surface roughness; Family-Viscek dynamical scaling hypothesis; anomalous scaling behaviour; correlation length; line edge roughness; open-surface resist films; power-law; resist roughness; rms roughness; stochastic simulation; Analytical models; Ionization; Kinetic theory; Material properties; Microelectronics; Polymer films; Resists; Rough surfaces; Stochastic processes; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490483
  • Filename
    5490483