Platinum decoration of silicon direct wafer bonded interfaces

Author

Valente, D. ; Batut, N. ; Ventura, L.

Author_Institution

Power Microelectron. Lab., Univ. of Tours, Tours, France

fYear

2010

fDate

16-19 May 2010

Firstpage

253

Lastpage

256

Abstract

In this paper we investigate the electrical properties of hydrophobic silicon wafer bonded interface. Platinum diffusion, commonly used to enhance fast bipolar P-i-N diodes, is performed to control its electrical properties. The control of the bonded interface properties is a necessary condition to integrate the wafer bonding technique as a new manufacturing process for structures such as bidirectional switch devices. This work is based on spreading Resistance (SR), Deep Level Transient Spectroscopy (DLTS) and Micro-PhotoConductivity Decay (μ-PCD) characterizations of as-bonded and platinum decorated silicon direct wafer bonded interfaces.

Keywords

deep level transient spectroscopy; electric properties; elemental semiconductors; hydrophobicity; p-i-n diodes; platinum; silicon; wafer bonding; μ-PCD characterizations; DLTS; bidirectional switch devices; bipolar P-i-N diodes; bonded interface property; deep level transient spectroscopy; electrical property; hydrophobic silicon wafer bonded interface; microphotoconductivity decay; platinum decoration; platinum diffusion; silicon direct wafer bonded interfaces; spreading resistance; wafer bonding technique; Interface states; Microelectronics; Platinum; Pulse measurements; Scanning electron microscopy; Silicon; Spectroscopy; Strontium; Switches; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Proceedings (MIEL), 2010 27th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-7200-0

Type

conf

DOI

10.1109/MIEL.2010.5490487

Filename

5490487