Title :
Design, fabrication, and calibration of stress sensors embedded in a TSV interposer in a 300mm wafer
Author :
Tzeng, Pei-Jer ; Lau, John H. ; Dai, Ming-Ji ; Wu, Sheng-Tsai ; Chien, Heng-Chieh ; Chao, Yu-Lin ; Chen, Chien-Chou ; Chen, Shang-Chun ; Wu, Chien-Ying ; Lee, Ching-Kuan ; Zhan, Chau-Jie ; Chen, Jui-Chin ; Hsu, Yi-Feng ; Ku, Tzu-Kun ; Kao, Ming-Jer
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan
fDate :
May 29 2012-June 1 2012
Abstract :
In this study, the design, fabrication, and calibration of the piezoresistive stress sensors [1-18] embedded in a TSV (through silicon via) interposer in a 300mm wafer are investigated. The results presented herein should be useful for the development of 3D integration such as measuring the strength of the TSV device and interposer wafers, during and after all the processes such as wafer thinning, SiO2 deposition, metallization, and electroplating.
Keywords :
calibration; electroplating; piezoresistive devices; semiconductor device metallisation; silicon compounds; stress measurement; three-dimensional integrated circuits; 3D integration; SiO2; TSV interposer; calibration; deposition; electroplating; interposer wafers; metallization; piezoresistive stress sensors; size 300 mm; through silicon via; wafer thinning; Calibration; Piezoresistance; Sensors; Silicon; Stress; Stress measurement; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6249071
