Title :
Structure and properties of PZT/PT composite thin film on polysilicon electrode
Author :
Xiaoqing, Wu ; Yintang, Yang ; Qin, Liu ; Liangying, Z. Hang ; Xi, Yao
Author_Institution :
Electron. Mater. Res. Lab., Xi´´an Jiaotong Univ., China
Abstract :
Micro machining process can be much simplified when PZT thin film is directly deposited on doped polysilicon wafer which is used as bottom electrode in fabrication of micro actuators. However, the formation of perovskite phase for PZT thin film on polysilicon layer is difficult. The deposited thin film is very easy to crack. PT thin film was used as a transition layer between polysilicon wafer and PZT film. Crack-free PZT/PT composite thin film with perovskite structure was obtained by metallo-organic decomposition (MOD) method. By comparing the ferroelectric behaviors and C-V curves of PZT thin film on platinum which is widely used as bottom electrode in the study of ferroelectric thin films, the effects of polysilicon on crystalline structure and properties of the PZT/PT composite thin film were investigated
Keywords :
composite materials; electrodes; ferroelectric thin films; lead compounds; micromachining; piezoceramics; silicon; C-V characteristics; PZT-PbTiO3; PZT/PT composite thin film; PbZrO3TiO3-PbTiO3; Si; crystalline structure; ferroelectric properties; metallo-organic decomposition; microactuator fabrication; micromachining; perovskite phase; polysilicon electrode; Capacitance-voltage characteristics; Electrodes; Fabrication; Ferroelectric films; Ferroelectric materials; Machining; Microactuators; Platinum; Sputtering; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598204
