SPM electrical characterization of Ti/Al — Based ohmic contacts for sub-micron devices

Author

Kolaklieva, L. ; Nesheva, D. ; Kakanakov, R. ; Bineva, I. ; Cimalla, V.

Author_Institution

Inst. of Appl. Phys., Bulgarian Acad. of Sci., Plovdiv, Bulgaria

fYear

2010

fDate

16-19 May 2010

Firstpage

195

Lastpage

198

Abstract

The electrical properties of Ti/Al-based ohmic contacts with two types of barrier films, Ti and Mo, are investigated in dependence on the Ti/Al ratio and the type of the barrier layer. They are explored by I-V, resistivity and surface potential measurements. It is found out that the Ti/Al/Ti/Au contact composition with Ti/Al ratio of 0.43 exhibits the lowest contact resistivity and smallest variations of the surface potential amplitude. The contacts with the same Ti/Al ratio and a Mo barrier layer show better surface morphology but poorer electrical properties.

Keywords

aluminium alloys; annealing; atomic force microscopy; ohmic contacts; surface morphology; surface potential; titanium alloys; SPM electrical characterization; Ti-Al; barrier layers; contact composition; electrical properties; ohmic contacts; submicron devices; surface morphology; surface potential amplitude; surface potential measurements; Annealing; Atomic force microscopy; Conductivity; Force measurement; Gallium nitride; Gold; Metallization; Ohmic contacts; Scanning probe microscopy; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Proceedings (MIEL), 2010 27th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-7200-0

Type

conf

DOI

10.1109/MIEL.2010.5490502

Filename

5490502