Electrical properties of Au/C60/n-Si photodiode structures with pristine and dithioloctane-functionalized C60 nanolayers

The dithioloctane-treatment of C₆₀ film was shown to ensure the deposition on it of gold nanoparticles with the controlled size and shape leading to enhancement of the Au/C₆₀/n-Si structure photocurrent due to the excitation of local plasmons in metal nanoparticles. In this work the detailed investigation of the electrical properties of these structures with the pristine and dithioloctane-treated C₆₀ interlayers was made. The current-voltage and capacitance-voltage dependencies were measured in the temperature range from 80 to 320 K. The mechanisms of the current flow and their parameters were determined. It was shown, that the used of dithioloctane-treatment of C₆₀ layer did not change the mechanisms of the in current flow in Au/C₆₀/n-Si structure, specifically, in a decrease of the series resistance, determined by C₆₀ layer, and in a decrease of the effective height of barrier for the reverse current flow.